Decoupling of RTS noise in high density CMOS image sensor using new test structures

Author

Bok, Jung-Deuk ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Jung, Yi-Jung ; Park, Seong-Hyung ; Choi, Woon-Il ; Ha, Man-Lyun ; Lee, Ju-Il ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

fYear

2011

fDate

4-7 April 2011

Firstpage

87

Lastpage

89

Abstract

In this work, new test structures are proposed to characterize the RTS (Random Telegraph Signal) noise of the CMOS image sensor. The RTS noise of the driver transistor and the source follower transistor, as well as the source follower block itself, are measured using the proposed test structures. The probability of monitoring the RTS noise of the driver transistor and the source follower transistor is 76 % and 52 %, respectively. However, the probability of the generation of the RTS noise for the source follower block is about 74 %. Therefore, it can be said that the driver transistor dominates the RTS noise of the source follower block.

Keywords

CMOS image sensors; driver circuits; probability; random noise; signal denoising; CMOS image sensor; RTS noise; driver transistor; probability; random telegraph signal; source follower block; source follower transistor; Conferences; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Conference_Location

Amsterdam

ISSN

1071-9032

Print_ISBN

978-1-4244-8526-0

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2011.5976865

Filename

5976865