Self- compliance unipolar resistive switching and mechanism of Cu/SiO2/TiN RRAM devices

Author

Yu, D. ; Liu, L.F. ; Huang, P. ; Zhang, F.F. ; Chen, B. ; Gao, B. ; Hou, Y. ; Han, D.D. ; Wang, Y. ; Kang, J.F. ; Zhang, X.

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

CMOS compatible Cu/SiO₂/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.

Keywords

CMOS memory circuits; copper; electrical conductivity transitions; electrical resistivity; random-access storage; silicon compounds; titanium compounds; CMOS compatible resistive random access memory; Cu-SiO₂-TiN; RRAM device; conductive filament; electrical effect; physical model; resistance states; self-compliance unipolar resistive switching; thermal effect; CMOS integrated circuits; Switches; Switching circuits; Thermal resistance; Tin; Voltage measurement; RRAM; SiO2; unipolar switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243356

Filename

6243356