GaN HEMT based 250W CCM photovoltaic micro-inverter

The high speed, conductivity, and voltage blocking capability of the GaN HEMT facilitates higher efficiency, and smaller size of switched mode power supply designs. Characteristics such as these are important in the solar energy field, in which every extra Watt of harvestable power is extremely valuable. In this paper, the design and experimental results of a 250W 240VAC photo-voltaic micro-inverter utilizing commercially available enhancement-mode GaN HEMTs are presented. The design philosophy is centered on leveraging the advantages of GaN while applying analytics to maximizing efficiency and minimizing device stress. To that end, the nuances of employing GaN devices with respect to parasitic resonance, layout dependent performance, and thermal considerations are also presented for the purpose of executing a robust design.