• DocumentCode
    2655250
  • Title

    High-Power X-Band Mic Diode Phase Shifters

  • Author

    Kamihashi, S. ; Kuroda, M. ; Hirai, K.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    81
  • Lastpage
    83
  • Abstract
    High-power X-band MIC diode phase shifters have been developed using glass-passivated PIN diodes with a grooved-mesa structure. Although they have outer dimensions of 20mm x 41mm x 10mm, they can handle 300W and 500W peak rf power depending upon the diodes used.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124190
  • Filename
    1124190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2655250