• DocumentCode
    2655907
  • Title

    Pulsed Power Performance of GaAs FETS at X-Band

  • Author

    Temple, S.J. ; Galani, Z. ; Dormail, J. ; Healy, R.M. ; Hewitt, B.S.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    177
  • Lastpage
    179
  • Abstract
    The pulsed operation of X-band amplifiers using 4.8 mm power FETs resulted in a nominal output power improvement of 2 dB when operated at elevated drain voltages of up to 18 volts. An ouptut power of 6 W peak with 6 dB gain at 10 GHz was obtained from a balanced amplifier.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124223
  • Filename
    1124223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2655907