Next-generation semiconductors for DC-to-DC converters

Author

Darwish, Mahmoud

Author_Institution

Vishay-Siliconix, Santa Clara, CA, USA

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

15

Lastpage

21

Abstract

Recent developments in power devices for low voltage DC-to-DC conversion are discussed with emphasis on switch-mode DC-to-DC synchronous buck converter applications. The system functional blocks are presented and the progress in various devices such as power trench MOSFETs, Schottky barrier rectifiers, and power ICs is reviewed. The optimization of a new power trench MOSFET with W-shaped gate structure (WFET) as both a control and synchronous switch is investigated. The factors influencing system partitioning such as required performance, current level, power dissipation, and cost objectives are highlighted.

Keywords

DC-DC power convertors; Schottky diodes; circuit optimisation; integrated circuit design; power MOSFET; power integrated circuits; power semiconductor devices; rectifiers; switched mode power supplies; DC-to-DC converters; Schottky barrier rectifiers; W-shaped gate structure; WFET; circuit optimization; control switch; current level; power IC; power dissipation; power semiconductor devices; power trench MOSFET; switch-mode synchronous buck converter; synchronous switch; Circuit optimization; DC-DC power conversion; Integrated circuit design; Power MOSFETs; Power integrated circuits; Power semiconductor devices; Rectifiers; Schottky diodes; Switched mode power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274927

Filename

1274927