DocumentCode
2656647
Title
Reliability issues in SOI technologies and circuits
Author
Pelloie, Jean-Luc
Author_Institution
SOISIC, Grenoble, France
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
151
Lastpage
155
Abstract
After explaining why SOI technologies bring higher speed, lower power consumption, higher integration and future CMOS perspectives, this paper addresses the reliability issues at the different stages of the development cycle: SOI wafer, device and circuit design.
Keywords
elemental semiconductors; integrated circuit design; integrated circuit reliability; silicon; silicon-on-insulator; SOI device; SOI wafer; Si; circuit design; circuit reliability; silicon-on-insulator; Integrated circuit design; Integrated circuit reliability; Silicon; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274956
Filename
1274956
Link To Document