Poly-silicon quantum dot single electron transistors

Author

Kang, Kwon-Chil ; Kang, Sangwoo ; Yang, Hong Sun ; Song, Seung-hwan ; Kim, Jinho ; Lee, Jong Duk ; Park, Byung-Gook

Author_Institution

Seoul Nat. Univ., Seoul

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by selective etch of a silicon nanowire on a planarized surface and subsequent deposition and etch-back of poly-silicon. The device is named as PQD-SET, i.e., poly-silicon quantum dot SET. PQD-SET shows clear Coulomb oscillation at room temperature.

Keywords

monolithic integrated circuits; nanowires; oscillations; semiconductor quantum dots; silicon; single electron transistors; Coulomb oscillation; fabrication method; poly-silicon deposition; poly-silicon etch-back; poly-silicon quantum dot; room temperature operation; self-aligned quantum dot; silicon nanowire; single electron transistors; Educational institutions; Electron devices; Etching; Fabrication; Planarization; Plasma applications; Quantum computing; Quantum dots; Silicon; Single electron transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422255

Filename

4422255