A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs

Author

Jun, Bongim ; Merrett, Neil ; Phillips, Stan ; Sutton, Akil K. ; Cressler, John D. ; Williams, John ; Ahyi, Claude ; Marshall, Paul W.

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this paper we compare 10 keV X-ray and 63 MeV proton radiation effects on 4H-SiC vertical trench JFET power transistors. The schematic cross-section of the 4H-SiC depletion-mode vertical trench JFET was investigated. For a direct comparison, total dose levels were held constant between the two radiation sources. The significant differences in device response for the two different radiation sources, and the isochronal annealing effects on proton-irradiated devices, are presented in this paper.

Keywords

X-ray effects; junction gate field effect transistors; power field effect transistors; proton effects; silicon compounds; wide band gap semiconductors; X-ray radiation effects; depletion-mode vertical trench JFET; isochronal annealing effects; power transistors; proton radiation effects; proton-irradiated devices; radiation sources; Breakdown voltage; Degradation; Educational institutions; Ionizing radiation; JFETs; Protons; Radiation effects; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422258

Filename

4422258