Hydrogen-terminated boron-doped diamond films under intense gamma irradiation

Diamond is a promising wide bandgap semiconductor with a large potential offering excitement and interest due to its unique blend of superlative physical properties. It is of utmost importance to demonstrate the influence of radiation on materials´ structural integrity as well as physical stability. The purpose of this project is to establish novel experimental strategies thus improving our understanding of the radiation-induced defects in diamond and quantification, which will be critical in designing a highly efficient prototype or practical device.