• DocumentCode
    2656767
  • Title

    A 150GHz fT/fmax 0.13μm SiGe:C BiCMOS technology

  • Author

    Laurens, M. ; Martinet, B. ; Kermarrec, O. ; Campidelli, Y. ; Deléglise, F. ; Dutarte ; Troillard, G. ; Gloria, D. ; Bonnouvrier, J. ; Beerkens, R. ; Rousset, V. ; Leverd, F. ; Chantre, A. ; Monroy, A.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    199
  • Lastpage
    202
  • Abstract
    This paper describes a manufacturable 0.13μm SiGe:C BiCMOS technology for optical networking and wireless applications, with npn fT/fmax of 166/175GHz and 1.8V BVCEO, dual VT and dual gate oxide CMOS devices, high quality passives and a 6-level copper back-end.
  • Keywords
    BiCMOS integrated circuits; carbon; circuit optimisation; heterojunction bipolar transistors; integrated circuit manufacture; silicon compounds; 0.13 micron; 1.8 V; 150 GHz; 166 GHz; 175 GHz; BiCMOS; Cu; HBT; SiGe:C; copper back-end; gate oxide CMOS devices; heterojunction bipolar transistor; high quality passives; npn fT/fmax; optical networking; wireless applications; BiCMOS integrated circuits; Carbon; Circuit optimization; Heterojunction bipolar transistors; Integrated circuit manufacture; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274965
  • Filename
    1274965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656767