• DocumentCode
    2656795
  • Title

    A 0.13 μm BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT

  • Author

    Orner, B.A. ; Liu, Q.Z. ; Rainey, B. ; Stricker, A. ; Geiss, P. ; Gray, P. ; Zierak, M. ; Gordon, M. ; Collins, D. ; Ramachandran, V. ; Hodge, W. ; Willets, C. ; Joseph, A. ; Dunn, J. ; Rieh, J.-S. ; Jeng, S.-J. ; Eld, E. ; Freeman, G. ; Ahlgren, D.

  • Author_Institution
    IBM Microelectron. Div., IBM, Essex Junction, VT, USA
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    We present for the first time a very high performance SiGe HBT with fT = 200 GHz and fmax = 280 GHz that has been successfully integrated with IBM´s standard 0.13 μm foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.
  • Keywords
    BiCMOS integrated circuits; heterojunction bipolar transistors; semiconductor device manufacture; semiconductor device models; semiconductor process modelling; silicon compounds; 0.13 micron; 200 GHz; 280 GHz; BiCMOS 8HP technology; CMOS node; HBT; SiGe; heterojunction bipolar transistor; BiCMOS integrated circuits; Heterojunction bipolar transistors; Semiconductor device manufacture; Semiconductor device modeling; Semiconductor process modeling; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274966
  • Filename
    1274966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656795