DocumentCode
2657088
Title
Fin width variation effects on program disturbance characteristics in a NAND type bulk fin SONOS flash memory
Author
Il Hwan Cho ; Il Han Park ; Jong-Ho Lee ; Hyungcheol Shin
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
We have analyzed program inhibition in bulk fin SONOS flash memory devices with a variation of fin body width. Compared to the coupled channel potential of wide fin channel device during programming, the potential of narrow fin structure device was much large. Relationship between the fin width and the program disturbance characteristics can be useful in memory design and optimization.
Keywords
NAND circuits; flash memories; NAND type bulk fin; SONOS flash memory; channel potential; fin width variation effects; program disturbance characteristics; Analytical models; Capacitance; Computer science; Dielectrics; Educational institutions; Electronic mail; FinFETs; Flash memory; Performance analysis; SONOS devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422279
Filename
4422279
Link To Document