• DocumentCode
    2657130
  • Title

    New EEPROM concept for single bit operation

  • Author

    Raguet, J.R. ; Bidal, V. ; Regnier, A. ; Mirabel, J.M. ; Laffont, R. ; Bouchakour, R.

  • Author_Institution
    STMicroelectronics, Rousset
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents a new small EEPROM memory with dual-control gate which allows high density memory application with single bit operations. This new architecture is based on a previous work proposed by Regnier et al. in 2004. The specificity was to use a dual-control gate EEPROM in order to control the coupling ratio on floating gate and so perform the memory operations without select transistor.
  • Keywords
    EPROM; EEPROM memory; dual control gate; high density memory application; single bit operation; Current measurement; EPROM; Educational institutions; Etching; Intrusion detection; Microelectronics; Nonvolatile memory; Prototypes; Threshold voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422281
  • Filename
    4422281
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657130