An alternate approach of modeling the direct tunneling (DT) current through multi-gate stacks in high-κ Devices

In this work, an alternate semi-classical modeling has been numerically simulated to characterize the direct tunneling current through the two-dielectric stacks. In our modeling, a modified WKB approximation is selected in getting a more accurate tunneling probability and it´s mainly determined by the kinetic energy on the propagation direction rather than the total energy.