Temperature dependant characteristics of scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes

Author

Zhang, Yanli ; Liyanage, Luckshitha S. ; Wang, Gan ; Jin, Zhian ; White, Marvin H.

Author_Institution

Lehigh Univ., Sherman

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

This paper discusses the temperature dependence of the threshold voltage, electron mobility and gate leakage current for the scaled NMOS transistor, which has an interfacial SiO₂ layer of 0.5 nm and an ALD (atomic layer deposition) fabricated HfO₂ dielectric layer of 2.0 nm with a 10 nm TiN metal gate electrode covered by polysilicon.

Keywords

MOSFET; atomic layer deposition; electron mobility; hafnium compounds; high-k dielectric thin films; leakage currents; silicon compounds; titanium compounds; ALD fabrication; SiO₂-HfO₂; TiN; atomic layer deposition; electron mobility; gate leakage current; interfacial layer; metal gate electrodes; scaled NMOS transistors; size 0.5 nm; size 10 nm; size 2 nm; temperature dependant characteristics; threshold voltage; ultra thin high-K dielectrics; Atomic layer deposition; Electrodes; Electron mobility; Hafnium oxide; High-K gate dielectrics; Leakage current; MOSFETs; Temperature dependence; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422318

Filename

4422318