A comparative study of Mos memory structures that contain platinum or gold nanoparticles

Author

Sargentis, Ch ; Giannakopoulos, K. ; Travlos, A. ; Tsamakis, D.

Author_Institution

Nat. Tech. Univ. of Athens, Athens

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" SiO₂ and a thicker HfO₂ "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at room temperature, on 3.5 nm of SiO₂, which was thermally grown on a Si wafer. The nanoparticles are formed without any annealing. Then, they are capped with a HfO₂ layer.

Keywords

MIS structures; MOS memory circuits; dielectric thin films; gold; hafnium compounds; nanoparticles; nanotechnology; platinum; silicon compounds; tunnelling; MOS memory structures; SiO₂-Au-HfO₂; SiO₂-Pt-HfO₂; dielectric layers; electron-gun deposition; gold nanoparticles; platinum nanoparticles; size 3.5 nm; temperature 293 K to 298 K; tunneling; Annealing; Dielectrics; Electric variables; Gold; Hafnium oxide; Nanoparticles; Platinum; Temperature; Thickness control; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422319

Filename

4422319