• DocumentCode
    2657958
  • Title

    A 25 Watt, 5 GHz GaAs FET Amplifier for MLS

  • Author

    Takayama, Y. ; Honjo, K.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    496
  • Lastpage
    498
  • Abstract
    A 25-Watt, 29-dB gain, 5-GHz FET amplifier for the transmitter in the Microwave Landing System has been developed using practical GaAs FETs assembled in ceramic packages with internal matching networks. This four-stage amplifier provides 30-Watt power output with 18.5% power efficiency at 17 dBm power input level.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124332
  • Filename
    1124332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657958