Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Author

Yongxun Liu ; Hayashida, Tetsuro ; Matsukawa, Takashi ; Endo, Kazuhiko ; Masahara, Meishoku ; O´uchi, Shin-ichi ; Sakamoto, Kunihoro ; Ishii, Kenichi ; Tsukada, Junichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Ogura, Atsushi ; Suzuki, Eiichi

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

As one of promising metal gate materials, PVD TiN has widely been studied for conventional bulk-planar CMOS devices due to its high purity [1, 2]. However, there have been no systematical studies regarding the PVD TiN gate work function (tin) control using the nitrogen gas flow ratio (Rfrac12 = N2/(Ar+N2)) in the sputtering. In this paper, we present the Rfrac12 controlled tunable work function PVD TiN gate technology and its application for FinFET CMOS.

Keywords

CMOS integrated circuits; MOSFET; nitrogen; sputtering; titanium compounds; FinFET CMOS; PVD; TiN; metal gate technology; nitrogen gas flow ratio; sputtering; Atherosclerosis; CMOS technology; Degradation; FinFETs; Fluid flow; MOSFETs; Materials science and technology; Nitrogen; Tin; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422324

Filename

4422324