DocumentCode
2658155
Title
Deposition of nanocrystalline silicon thin film without substrate heating for flexible electronics
Author
Han, Sang-Myeon ; Kim, Sun-Jae ; Park, Joong-Hyun ; Kuk, Seung-Hee ; Han, Min-Koo
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
The purpose of our work is to report the characteristics of nanocrystalline silicon (nc-Si) thin films deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) without substrate heating suitable for low temperature process thin film devices which can be applied to flexible electronics. For flexible displays, it is inevitable to limit the process temperature to avoid deforming substrates like plastics.
Keywords
flexible electronics; nanostructured materials; plasma CVD; semiconductor thin films; silicon; Si; flexible electronics; inductively coupled plasma chemical vapor deposition; nanocrystalline silicon thin film; Flexible electronics; Heating; Nanoscale devices; Plasma displays; Plasma temperature; Semiconductor thin films; Silicon; Sputtering; Substrates; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422334
Filename
4422334
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