• DocumentCode
    2659077
  • Title

    Projections of Schottky Barrier source-drain Gallium Nitride MOSFET based on TCAD simulation and experimental results

  • Author

    Ozbek, A. Merve ; Veety, Matthew T. ; Morgensen, Michael ; Ma, Lei ; Johnson, M.A.L. ; Barlage, Doug W.

  • Author_Institution
    North Carolina State Univ., Raleigh
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper details the use of nickel Schottky barriers as the source and drain for a Schottky barrier GaN MOSFET (SB-MOSFET).
  • Keywords
    MOSFET; Schottky barriers; gallium compounds; nickel; semiconductor device models; technology CAD (electronics); GaN; Ni; SB-MOSFET; Schottky barrier GaN MOSFET; TCAD simulation; nickel Schottky barriers; source-drain gallium nitride MOSFET; Computational modeling; Dielectric substrates; Educational institutions; Equations; Frequency estimation; Gallium nitride; III-V semiconductor materials; MOSFET circuits; Nickel; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422385
  • Filename
    4422385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659077