Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems

Author

Huang, Wenli ; Jain, Faquir C.

Author_Institution

US Mil. Acad., WestPoint

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

This paper presents simulations on InGaN-AlGaN and ZnCdSe-ZnMgSSe quantum wire lasers having excitonic transitions. We have found that the threshold current density (J_th) in a quantum wire laser is almost temperature independent when exciton binding energies are in the range of 30-50 meV. This behavior is like quantum dot lasers having free carrier transitions.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; current density; gallium compounds; indium compounds; magnesium compounds; optical materials; quantum well lasers; semiconductor device models; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; InGaN-AlGaN; ZnCdSe-ZnMgSSe; exciton binding energy; excitonic transitions; free carrier transition; pseudo quantum dot behavior; quantum wire laser simulation; threshold current density; wide gap quantum wire lasers; Excitons; Laser theory; Laser transitions; Optical materials; Quantum computing; Quantum dot lasers; Quantum well lasers; Temperature; Threshold current; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422386

Filename

4422386