DocumentCode
2659139
Title
Protection circuit of normally-on SiC JFET using an inrush current
Author
Kim, Jong-Hyun ; Min, Byung-Duk ; Baek, Ju-Won ; Yoo, Dong-Wook
Author_Institution
New & Renewable Energy Syst. Res. Center, Korea Electrotechnol. Res. Inst., Changwon, South Korea
fYear
2009
fDate
18-22 Oct. 2009
Firstpage
1
Lastpage
4
Abstract
A protection circuit for the normally-on SiC JFET is proposed in this paper. The protection circuit uses an inrush current that charges DC link capacitor in the initial time. Most of all, the normally-on SiC JFET can be protected using this current. But the inrush current is not generated under the special condition when the line voltage starts at zero magnitude of voltage. Another protection circuit is added to doubly protect SiC JFET under the condition. The experimental result shows that the proposed protection circuit has good performances.
Keywords
capacitors; field effect integrated circuits; semiconductor materials; silicon compounds; wide band gap semiconductors; DC link capacitor charging; JFET; SiC; inrush current; protection circuit; JFET circuits; Silicon carbide; Surge protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
Conference_Location
Incheon
Print_ISBN
978-1-4244-2490-0
Electronic_ISBN
978-1-4244-2491-7
Type
conf
DOI
10.1109/INTLEC.2009.5351894
Filename
5351894
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