• DocumentCode
    2659139
  • Title

    Protection circuit of normally-on SiC JFET using an inrush current

  • Author

    Kim, Jong-Hyun ; Min, Byung-Duk ; Baek, Ju-Won ; Yoo, Dong-Wook

  • Author_Institution
    New & Renewable Energy Syst. Res. Center, Korea Electrotechnol. Res. Inst., Changwon, South Korea
  • fYear
    2009
  • fDate
    18-22 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A protection circuit for the normally-on SiC JFET is proposed in this paper. The protection circuit uses an inrush current that charges DC link capacitor in the initial time. Most of all, the normally-on SiC JFET can be protected using this current. But the inrush current is not generated under the special condition when the line voltage starts at zero magnitude of voltage. Another protection circuit is added to doubly protect SiC JFET under the condition. The experimental result shows that the proposed protection circuit has good performances.
  • Keywords
    capacitors; field effect integrated circuits; semiconductor materials; silicon compounds; wide band gap semiconductors; DC link capacitor charging; JFET; SiC; inrush current; protection circuit; JFET circuits; Silicon carbide; Surge protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
  • Conference_Location
    Incheon
  • Print_ISBN
    978-1-4244-2490-0
  • Electronic_ISBN
    978-1-4244-2491-7
  • Type

    conf

  • DOI
    10.1109/INTLEC.2009.5351894
  • Filename
    5351894