• DocumentCode
    2659189
  • Title

    Effectiveness of Ultra-FRFETTM for the HV-BLU system in LCD TVs

  • Author

    Kim, Dong-Soo ; Yeon, Jae-Eul ; Cho, Kyu-Min ; Kim, Hee-Jun

  • Author_Institution
    HV PCIA, Fairchild Korea Semicond., Bucheon, South Korea
  • fYear
    2009
  • fDate
    18-22 Oct. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper introduces a newly improved MOSFET, ultra-FRFET of which Trr characteristic is much faster than that of the typical MOSFET and presents its effectiveness when it is applied to HV-BLU system of LCD TVs. The reverse recovery time, Trr of ultra-FRFET is shorter than 40 nsec and the peak value of reverse recovery current, irr is also much smaller compared to the typical MOSFET\´s, which are sufficient to prevent the MOSFET\´s failures without additional FRDs and diodes in HV-BLU system with a half-bridge resonant inverter topology worked by PWM method. In order to verify the validity, the loss analysis and the experimental for both cases, the conventional solution using typical MOSFETs with additional FRDs and new soution using only ultra-FRFETs are implemented for the HV-BLU of 40" LCD TV. As a result, the effectiveness of ultra-FRFET was verified and the results are presented in this paper.
  • Keywords
    MOSFET; PWM invertors; liquid crystal displays; resonant invertors; television; HV-BLU system; LCD TV; MOSFET; PWM method; resonant inverter topology; ultra-FRFETTM; Diodes; MOSFET circuits; Pulse width modulation inverters; Resonant inverters; TV; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 2009. INTELEC 2009. 31st International
  • Conference_Location
    Incheon
  • Print_ISBN
    978-1-4244-2490-0
  • Electronic_ISBN
    978-1-4244-2491-7
  • Type

    conf

  • DOI
    10.1109/INTLEC.2009.5351897
  • Filename
    5351897