• DocumentCode
    2659267
  • Title

    Design and simulation of strained Si/SiGe dual channel MOSFETs

  • Author

    Goyal, Puneet ; Moon, James E. ; Kurinec, Santosh K.

  • Author_Institution
    Rochester Inst. of Technol., Rochester
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper reports the design, modeling and simulation of NMOS and PMOS transistors with a tensile strained Si channel layer and compressively strained SiGe channel layer for a 65 nm logic technology node. A unified modeling approach consisting of different physics based models has been formulated in this work and their ability to predict the device behavior has been investigated.
  • Keywords
    Ge-Si alloys; MOSFET; NMOS transistor; PMOS transistor; dual channel MOSFET; strained Si-SiGe channel layer; Analytical models; Germanium silicon alloys; MOS devices; MOSFETs; Paper technology; Photonic band gap; Physics; Predictive models; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422396
  • Filename
    4422396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2659267