Class E resonant inverter optimized design for high frequency (MHz) operation using eGaN HEMTs

The Class-E resonant converter can achieve zero-voltage switching and zero-dv/dt switching when the switch is turned on in optimum mode. This paper presents a design procedure for Class E converter operating at high switching frequency (tens of MHz), considering the tradeoff between device voltage stress and current stress. The operation of a class E inverter is presented, and analytical steady-state equations for the Class E inverter are given valid at any switch-on duty cycle for operation with highly loaded quality factor. The optimized design procedure is described in detail. To verify the proposed approach, a 10MHz switching frequency, 20W output power GaN Class-E inverter design example is given, and its Pspice simulation results are presented. Additionally, the analytical loss model of the Class-E inverter is derived.