A new electrostatically-excited silicon structure for CMUT and TE-mode resonators and sensing applications

Author

Ivan, Mihaela E. ; Dulmet, Bernard ; Martin, Gilles ; Abbe, Philippe ; Robert, Laurent ; Ballandras, Sylvain

Author_Institution

Time & Freq. Dept., Femto-ST Inst., Besancon, France

fYear

2012

fDate

21-24 May 2012

Firstpage

1

Lastpage

6

Abstract

This paper presents a new patent-pending micro-mechanical BAW resonant structure driven by electrostatic force. The devices are based on a one-port design with a 1 μm-thick electrostatic gap to superimpose a static bias voltage and a dynamic excitation to a silicon plate. Depending on the thickness of the standard silicon wafers, flexural or thickness-extensional (TE) modes can alternatively be driven, yielding a resonant frequency close to 68 kHz in flexural modes, and 10 MHz in TE modes. Modelling steps and experimental results are provided and compared for both kinds of modes. An application example of the flexural mode structure to gravimetric sensing is outlined.

Keywords

bulk acoustic wave devices; capacitive sensors; electrostatics; micromechanical resonators; microsensors; silicon; ultrasonic transducers; CMUT; Si; TE-mode resonators; capacitive micromachined ultrasonic transducer; dynamic excitation; electrostatic force; electrostatic gap; electrostatically-excited silicon structure; flexural modes; frequency 10 MHz; gravimetric sensing; one-port design; patent-pending micromechanical BAW resonant structure; sensing applications; silicon plate; silicon wafers; static bias voltage; thickness-extensional modes; Cavity resonators; Couplings; Electrostatics; Resonant frequency; Sensors; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2012 IEEE International

Conference_Location

Baltimore, MD

ISSN

1075-6787

Print_ISBN

978-1-4577-1821-2

Type

conf

DOI

10.1109/FCS.2012.6243724

Filename

6243724