Characteristics of 1.3-μm Quantum Dots Laser with a High Density and a High Uniformity QD

Author

Amano, T. ; Sugaya, T. ; Komori, K.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

fYear

0

fDate

0-0 0

Firstpage

69

Lastpage

70

Abstract

In this paper, we report the characteristics of a high density QD laser. In this report, we have realized high density (7.2times10¹¹ cm and high uniformity (25 meV) QD. Also, we have demonstrated a large modal gain of 54 cm^-1 at a grand state emission of beyond 1.3 mum. It is concluded that the proposed high density and high uniformity InGaAs QD fabrication method using GC-SRL and As₂ source becomes a break through technique of QD laser

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; 1.3 micron; 25 meV; As₂; InGaAs; QD; arsenic source; gradient-composition-strain reducing layer; modal gain; quantum dots fabrication method; quantum dots laser; state emission; Coatings; Gallium arsenide; Indium gallium arsenide; Laser theory; Mirrors; Quantum dot lasers; Temperature; Threshold current; US Department of Transportation; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708090

Filename

1708090