Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications

Author

Nguyen, Bich-yen ; Celler, George ; Cayrefourcq, Ian ; Patruno, Paul ; Mazure, Carlos

Author_Institution

Parc Technologique des Fontaines, Crolles

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

To meet HP and LP circuit requirements, increasing channel mobility is required to boost transistor performance and/or reduce Vdd for lower power dissipation without performance penalty. The ultra-thin body (UTB) devices with undoped and strained channels can be used to control the SCE and reduce the sub-threshold leakage for scaling and low power dissipation. Implementing strained-silicon is not just a substrate change; strained- Si will require much more extensive work as transistor scaling continues.

Keywords

CMOS integrated circuits; carrier mobility; low-power electronics; semiconductor devices; silicon-on-insulator; CMOS integrated circuit; SOI; channel mobility; high power circuit requirements; low power circuit requirements; transistor performance; transistor scaling; ultra-thin body devices; CMOS technology; Capacitive sensors; Germanium silicon alloys; Insulation; MOS devices; MOSFETs; Silicon germanium; Substrates; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422440

Filename

4422440