High-Power Single Mode InGaAs Sub-Monolayer Quantum-Dot Photonic-Crystal VCSELs

Author

Yang, H. P D ; Hsiao, R.S. ; Lin, G. ; Chi, J.Y. ; Hsu, I.C. ; Lai, Fang-I ; Kuo, H.C. ; Maleev, N.A. ; Blokhin, S.A.

Author_Institution

Nanophotonic Center, Ind. Technol. Res. Inst., Hsinchu

fYear

0

fDate

0-0 0

Firstpage

71

Lastpage

72

Abstract

An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first demonstrated. Single fundamental mode CW output power of 3.8 mW has been achieved in the 990 nm range, with a threshold current of 1 mA. SMSR larger than 35 dB has been observed over entire operation range

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beam applications; laser beams; laser modes; photonic crystals; quantum dot lasers; surface emitting lasers; 1 mA; 3.8 mW; 990 nm; CW output power; InGaAs; VCSEL; fiber-optic applications; photonic-crystal laser; single mode laser; sub-monolayer quantum-dot laser; vertical-cavity surface-emitting laser; Fiber lasers; Indium gallium arsenide; Laser modes; Photonic crystals; Power generation; Quantum dot lasers; Quantum dots; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708091

Filename

1708091