DocumentCode
2660181
Title
Facet Passivation of GaInAsP/InP Laser Diodes by Aluminum Ultrathin Layer Insertion
Author
Ichikawa, H. ; Fukuda, C. ; Hamada, K. ; Nakabayashi, T.
Author_Institution
Transmission Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama
fYear
0
fDate
0-0 0
Firstpage
83
Lastpage
84
Abstract
We demonstrated that facet degradation is successfully suppressed by inserting aluminum ultra-thin layer between semiconductor and dielectric coating films. We also clarified that aluminum layer suppress lack of phosphorus and increase in surface recombination
Keywords
III-V semiconductors; aluminium; arsenic compounds; dielectric thin films; gallium arsenide; gallium compounds; indium compounds; optical films; semiconductor lasers; surface recombination; Al; GaInAsP-InP; aluminum ultrathin layer insertion; dielectric coating films; facet degradation; facet passivation; laser diodes; semiconductor laser; surface recombination; Aluminum; Argon; Coatings; Degradation; Diode lasers; Indium phosphide; Optical films; Optical surface waves; Oxidation; Passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708097
Filename
1708097
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