DocumentCode
2660327
Title
Photonic Crystal Quantum Cascade Lasers with Improved Threshold Characteristics Operating up to Room Temperature
Author
Höfling, S. ; Heinrich, J. ; Hofmann, Ho. ; Kamp, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ.
fYear
2006
fDate
2006
Firstpage
97
Lastpage
98
Abstract
We fabricated two-dimensional photonic crystal GaAs/AlGaAs quantum cascade lasers operating at room temperature. Compared to reference devices with cleaved facets, the high reflectivity photonic crystal mirrors lead to a ~34% reduction of the threshold currents
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; optical fabrication; photonic crystals; quantum cascade lasers; thermo-optical effects; 293 to 298 K; GaAs-AlGaAs; cleaved facets; high reflectivity photonic crystal mirrors; room temperature; threshold characteristics; threshold currents; two-dimensional photonic crystal quantum cascade lasers; Etching; Finite difference methods; Gallium arsenide; Optical devices; Photonic band gap; Photonic crystals; Quantum cascade lasers; Reflectivity; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708104
Filename
1708104
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