DocumentCode
2660340
Title
Monte Carlo Simulation of AlGaAs/GaAs QCLs Including Both ? and X Valley Transport
Author
Gao, X. ; Botez, D. ; Knezevic, I.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
fYear
0
fDate
0-0 0
Firstpage
99
Lastpage
100
Abstract
Comprehensive Monte Carlo simulation of AlGaAs/GaAs QCLs reveals two carrier-loss mechanisms: Gamma states coupling to the same-stage X states and to the next-stage X states. Excellent agreement with experiment is achieved
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier density; gallium arsenide; quantum cascade lasers; AlGaAs-GaAs; Gamma states coupling; Gamma valley transport; Monte Carlo simulation; X valley transport; carrier-loss mechanisms; current density; quantum cascade lasers; Electrons; Gallium arsenide; Monte Carlo methods; Optical scattering; Phonons; Quantum cascade lasers; Quantum mechanics; Satellites; Schrodinger equation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708105
Filename
1708105
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