A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Author

Tan, Zhichao ; Chae, Youngcheol ; Daamen, Roel ; Humbert, Aurélie ; Ponomarev, Youri V. ; Pertijs, Michiel A P

Author_Institution

Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands

fYear

2012

fDate

13-15 June 2012

Firstpage

24

Lastpage

25

Abstract

A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

Keywords

CMOS integrated circuits; capacitors; humidity sensors; intelligent sensors; polymers; radiofrequency identification; 12.5-bit conversion; CMOS fully-integrated humidity sensor; RFID application; RFID sensor platform; co-integrated humidity sensor; energy consumption; energy-efficient CMOS humidity sensor; energy-efficient inverter-based capacitance-to-digital converter; humidity-sensitive polyimide layer; size 0.16 mum; top-metal finger capacitor; voltage 1.2 V; Capacitance; Capacitors; Humidity; Inverters; Modulation; Semiconductor device measurement; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSIC), 2012 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4673-0848-9

Electronic_ISBN

978-1-4673-0845-8

Type

conf

DOI

10.1109/VLSIC.2012.6243771

Filename

6243771