Conduction-band spin splitting effects in staggered-bandgap structures

Author

Zhang, Weidong ; Woolard, Dwight

Author_Institution

North Carolina State Univ., Raleigh

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

It is well understood that the two-fold energy degeneracy for spin-up and spin-down electrons regarding two dimensional electrons gas (2DEG) confined within a semiconductor heterostructure can be removed at zero magnetic fields (Bychkov, 1984). The splitting from the structure inversion asymmetry is described by the so-called Rashba term, H_R = plusmnalphak, where k is the wave vector and the coefficient alpha is proportional to the external electric field. The physical origin of Rashba effect is attributed to the spin-orbit (SO) interaction in semiconductor (Rashba, 2003).

Keywords

conduction bands; energy gap; spin-orbit interactions; two-dimensional electron gas; 2D electrons gas; 2DEG; Rashba effect; Rashba term; conduction band; energy degeneracy; external electric field; semiconductor heterostructure; spin splitting effects; spin-down electrons; spin-orbit interaction; spin-up electrons; staggered-bandgap structures; structure inversion asymmetry; wave vector; Differential equations; Educational institutions; Electron emission; Electron microscopy; Energy states; Magnetic confinement; Magnetic fields; Narrowband; Resonance; Schrodinger equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422488

Filename

4422488