1.3 μm-Band Laser with a High Characteristic Temperature (T0=130 K) on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

Author

Arai, Masakazu ; Watanabe, Takao ; Yuda, Masahiro ; Kinoshita, Kyoichi ; Ogata, Yasuyuki ; Yoda, Shinichi ; Kondo, Yasuhiro

Author_Institution

Photonics Labs., NTT Corp., Atsugi

fYear

0

fDate

0-0 0

Firstpage

157

Lastpage

158

Abstract

We have developed high-performance 1.3 mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In: 0.1) grown by a novel bulk crystal growth technique (TLZ method). This laser operates at a long wavelength of 1.28 mum and at temperatures up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95 to 155degC

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; quantum well lasers; thermo-optical effects; vapour phase epitaxial growth; 1.3 micron; 130 K; 25 to 95 C; 95 K; 95 to 155 C; InGaAs; InGaAs ternary substrate growth; MOVPE; bulk crystal growth technique; characteristic temperatures; laser diodes; strained InGaAs quantum well; traveling liquidus-zone method; Conducting materials; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Optical materials; Quantum well lasers; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708134

Filename

1708134