Non-equilibrium operation of arsenic diffused long-wavelength infrared HgCdTe photodiodes

We have fabricated large area P⁺/pi/N⁺ devices in HgCdTe material with 10 mum cut-off at 78 K by molecular beam epitaxy. We have demonstrated a unique planar device architecture using a novel approach in obtaining low arsenic doping concentrations in HgCdTe. Results indicate Auger suppression in P⁺/pi/N⁺ devices at 300K and lower temperatures. A principal challenge was to obtain a low p-type doping level in the pi region. This paper will discuss a novel approach in obtaining low arsenic doping concentrations and present device results demonstrating Auger suppression.