• DocumentCode
    2661410
  • Title

    Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

  • Author

    Wang, Gan ; Eichenlaub, Nathan ; Zhang, Yanli ; White, Marvin H.

  • Author_Institution
    Lehigh Univ., Sherman
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the authors have fabricated MANOS NVSM devices with high-k Al2O3 as the blocking oxide, which demonstrate good speed, 10-year retention, and endurance performance for future low voltage operation and improved NVSM array efficiency.
  • Keywords
    alumina; random-access storage; semiconductor storage; Al2O3; MANOS NVSM devices; MANOS nonvolatile semiconductor memory devices; blocking oxide; metal-Al2O3-nitride-oxide-Si NVSM device; Aluminum oxide; High K dielectric materials; High-K gate dielectrics; Low voltage; Nonvolatile memory; SONOS devices; Semiconductor memory; Solid state circuits; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422527
  • Filename
    4422527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661410