Properties of high-performance phototransistor photodetector (PTPD) in standard SiGe BiCMOS technology

Author

Lai, Kuang-Sheng ; Huang, Ji-Cheng ; Hsu, Klaus Y J

Author_Institution

Nat. Tsing Hua Univ., Hsinchu

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

A high-performance phototransistor photodetector (PTPD) in commercial 0.35 mum SiGe BiCMOS technology has been realized and demonstrated. Responsivities of 9.5 A/W for 670 nm light and of 5.2 A/W for 850 nm light were achieved. Without altering any process step, it is easy to integrate the PTPD with other on-chip circuits to form a high-performance OEIC for fiber-channel (850 nm light) or imaging (visible light) applications. The PTPD is composed of a shallow surface photodetector (SPD) and an integrated SiGe heterojunction bipolar transistor (HBT).

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; photodetectors; BiCMOS technology; SiGe; fiber channel; heterojunction bipolar transistor; on-chip circuits; phototransistor photodetector; shallow surface photodetector; size 0.35 mum; BiCMOS integrated circuits; Capacitance; Dark current; Educational institutions; Germanium silicon alloys; Heterojunction bipolar transistors; Paper technology; Photodetectors; Phototransistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422532

Filename

4422532