• DocumentCode
    2661579
  • Title

    Composition and Strain of Coherent Si 1-x Ge x Islands on Si

  • Author

    Lockwood, D.J. ; Wu, X. ; Baribeau, J.-M.

  • Author_Institution
    Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont.
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    75
  • Lastpage
    77
  • Abstract
    In this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher
  • Keywords
    Ge-Si alloys; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; MBE; Si; Si(100) surfaces; Si1-xGex; alloy composition; coherent semiconductor island growth; epitaxial growth; strain profile; Capacitive sensors; Chemicals; Energy resolution; Germanium alloys; Molecular beam epitaxial growth; Nanostructures; Silicon alloys; Temperature; X-ray diffraction; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708170
  • Filename
    1708170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661579