• DocumentCode
    2661754
  • Title

    A novel low-trigger and high-holding voltage SCR without externally- assisted circuitry for area-efficient on-chip ESD protection

  • Author

    Lou, Lifang ; Liou, Juin J.

  • Author_Institution
    Univ. of Central Florida, Orlando
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel SCR device, called uSCR, has been presented for low-voltage IC´s ESD protection applications. This is the first time an SCR can possess a trigger voltage as low as 7 V without using any external triggering circuitry and a holding voltage as high as 6 V without sacrificing the ESD robustness, while at the same time consuming an area of only 2400 mum2 Experimental results of HBM and CDM testing have verified the on-chip protection capability of the uSCR device.
  • Keywords
    electrostatic discharge; thyristors; high-holding voltage SCR; low-voltage IC; on-chip ESD protection; uSCR device; Breakdown voltage; Computer science; Educational institutions; Electron devices; Electrostatic discharge; Low voltage; Protection; Robustness; Thyristors; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422547
  • Filename
    4422547