High-temperature CW mid-infrared interband cascade lasers

Author

Bewley, W.W. ; Canedy, C.L. ; Kim, C.S. ; Kim, M. ; Lindle, J.R. ; Larrabee, D.C. ; Nolde, J.A. ; Vurgaftman, I. ; Meyer, J.R.

Author_Institution

Naval Res. Lab., Washington

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The ICL performance has improved dramatically in recent years, with maximum cw operating temperatures of 264 and 269 K being reported by the groups at JPL and NRL, respectively. Narrow ridges were quite recently fabricated from the latest ICL wafers, using epitaxial-side-up mounting topped by Au-electroplating to enhance the heat removal. The longer-wavelength ICL operated cw to 229 K, which is considerably higher than for any earlier interband laser emitting at such long. The ridge was generated over 80 mW of cw power at 78 K, where the lasing threshold was only 4.7 A/cm.

Keywords

electroplating; gold; high-temperature techniques; laser beams; laser materials processing; semiconductor lasers; ICL performance; ICL wafers; epitaxial-side-up mounting; gold-electroplating; heat removal; high-temperature mid-infrared interband cascade lasers; lasing threshold; narrow ridge fabrication; temperature 229 K; temperature 264 K; temperature 269 K; temperature 78 K; Educational institutions; Filling; Gain measurement; Laboratories; Optical losses; Quantum cascade lasers; Radiative recombination; Semiconductor lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422550

Filename

4422550