DocumentCode
2661896
Title
In situ gas phase infrared absorption measurements during hafnium oxide atomic layer deposition
Author
Maslar, J.E. ; Hurst, W.S. ; Burgess, D.R. ; Kimes, W.A. ; Nguyen, N.V. ; Moore, E.F.
Author_Institution
Nat. Inst. of Stand. & Technol., College Park
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this work, measurements were performed in a single-wafer, warm-wall, horizontal-flow reactor. Additional design characteristics of this reactor include optical access near the wafer surface, good gas flow characteristics (facilitating reproducible high quality film growth), and an aluminum body (facilitating maintenance of a uniform wall temperature).
Keywords
atomic layer deposition; hafnium; aluminum body; gas flow characteristics; hafnium oxide atomic layer deposition; horizontal-flow reactor; in situ gas phase infrared absorption measurements; wafer surface; Atom optics; Atomic layer deposition; Atomic measurements; Electromagnetic wave absorption; Hafnium oxide; Inductors; Optical design; Optical films; Performance evaluation; Phase measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422554
Filename
4422554
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