• DocumentCode
    2662127
  • Title

    Triggered Electroluminescence from a Strained Si1-XGeX/Si Single Quantum Well

  • Author

    Yasuhara, N. ; Fukatsu, S.

  • Author_Institution
    Graduate Sch. of Arts & Sci., Tokyo Univ.
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    167
  • Lastpage
    169
  • Abstract
    Triggered electroluminescence is demonstrated in an electrically biased strained Si1-xGex/Si single quantum well where otherwise spatially separated electron-hole pairs created through impact ionization are made to recombine upon removing the bias voltage, paving a way towards on-demand Si-based single photon emitters and optical memory application
  • Keywords
    electroluminescence; electron-hole recombination; elemental semiconductors; impact ionisation; semiconductor quantum wells; silicon; silicon compounds; Si1-xGex-Si; bias voltage; electrically biased quantum well; electron-hole recombination; impact ionization; optical memory application; silicon-based single photon emitters; spatially separated electron-hole pairs; strained single quantum well; triggered electroluminescence; Electroluminescence; Electrons; Impact ionization; Light emitting diodes; Luminescence; Photonics; Quantum computing; Radiative recombination; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708201
  • Filename
    1708201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662127