Integration of high-voltage bipolars into a 0.35 μm CMOS based smart power platform

Author

Parthasarathy, V. ; Zhu, R. ; Khemka, V. ; Ger, M.L. ; Bettinger, T. ; Chang, S. ; Hui, P. ; Bose, A.

Author_Institution

Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA

fYear

2000

fDate

2000

Firstpage

32

Lastpage

35

Abstract

This paper describes the integration of high-voltage and high-performance bipolars into a 0.35 μm smart power technology through advanced high-energy implantation techniques. A vertical NPN with peak beta of 150 and BV_ceo of 23 V and vertical PNP with peak beta of 34 and BV_ceo of 18 V were demonstrated in a thin epitaxial process with no increase in thermal budget

Keywords

CMOS integrated circuits; bipolar transistors; epitaxial growth; ion implantation; power integrated circuits; semiconductor growth; 0.35 micron; 18 V; 23 V; CMOS based smart power platform; high-energy implantation techniques; high-voltage bipolar transistor integration; peak beta value; smart power technology; thermal budget; thin epitaxial process; vertical NPN; CMOS logic circuits; CMOS process; CMOS technology; Design optimization; Doping profiles; Implants; Intelligent control; Intelligent vehicles; Logic devices; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886168

Filename

886168