DocumentCode
2662185
Title
Silicon-based Resonant-Cavity-Enhanced Photodetectors
Author
Buwen Cheng ; Chuanbo Li ; Rongwei Mao ; Fei Yao ; Chunlai Xue ; Jianguo Zhang ; Wenhua Shi ; Yuhua Zuo ; Jinzhong Yu ; Qiming Wang
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
182
Lastpage
184
Abstract
Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology
Keywords
III-V semiconductors; cavity resonators; elemental semiconductors; gallium arsenide; germanium; indium compounds; integrated circuit bonding; integrated optoelectronics; island structure; optical fabrication; photodetectors; silicon; Ge islands; InGaAs; Si; absorption materials; bonding technology; membrane structure; silicon-based resonant-cavity-enhanced photodetectors; Absorption; Bandwidth; Biomembranes; Germanium silicon alloys; Mirrors; Photodetectors; Photonics; Reflectivity; Resonance; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708206
Filename
1708206
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