• DocumentCode
    2662342
  • Title

    A 0.15 μm/0.6 dB-NFmin RF BiCMOS technology using cobalt silicide ground shields

  • Author

    Fujii, Hiroki ; Suzuki, Hisamitsu ; Yoshida, Hiroshi ; Yamazaki, Tohru

  • Author_Institution
    ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    98
  • Lastpage
    101
  • Abstract
    This paper describes a newly developed cobalt silicide ground shield without any additional process step for a 0.15 μm RF BiCMOS. By using this ground shield, low NFmin values of 0.6 dB/0.3 dB at 2 GHz with bipolar/nMOS transistors were simultaneously achieved and NF50 of an on-chip spiral inductor was remarkably improved at high frequency
  • Keywords
    BiCMOS integrated circuits; MOSFET; UHF bipolar transistors; UHF field effect transistors; UHF integrated circuits; cobalt compounds; integrated circuit measurement; integrated circuit metallisation; integrated circuit noise; 0.15 micron; 0.3 dB; 0.6 dB; 2 GHz; RF BiCMOS; RF BiCMOS technology; bipolar transistors; cobalt silicide ground shields; ground shield; minimum noise figure; nMOS transistors; on-chip spiral inductor; BiCMOS integrated circuits; Cobalt; Inductors; Noise figure; Parasitic capacitance; Radio frequency; Silicides; Spirals; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-6384-1
  • Type

    conf

  • DOI
    10.1109/BIPOL.2000.886182
  • Filename
    886182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2662342