DocumentCode
2662566
Title
GaAs IC fabrication with MOSIS-a user´s perspective
Author
Long, Stephen I. ; Butner, steven E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1990
fDate
1-3 May 1990
Firstpage
2562
Abstract
Fabrication of GaAs MOSFET digital ICs through the MOS Implementation Service (MOSIS) project. A design strategy for dependable high-speed custom GaAs digital circuits is described. CAD tools adapted for GaAs design are also described. Examples of GaAs IC projects using MOSIS service and the present status of the MOSIS service are examined
Keywords
III-V semiconductors; Schottky gate field effect transistors; application specific integrated circuits; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; integrated circuit technology; logic CAD; CAD tools; GaAs; GaAs IC projects; IC fabrication; MOS Implementation Service; MOSFET digital ICs; MOSIS; custom GaAs digital circuits; dependable digital ICs; design strategy; present status; semiconductors; user´s perspective; CMOS technology; Circuit synthesis; Costs; Digital integrated circuits; Fabrication; Foundries; Gallium arsenide; MESFET integrated circuits; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/ISCAS.1990.112532
Filename
112532
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