Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors

Author

Magnée, P. H C ; van Rijs, F. ; Dekker, R. ; Hartskeer, D. M H ; Kemmeren, A.L.A.M. ; Koster, R. ; Huizing, H.G.A.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2000

fDate

2000

Firstpage

199

Lastpage

202

Abstract

For the first time, we show an enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum output power, 0.5 W with a power added efficiency >60%, an increase in power gain of 2 dB, up to 14.5 dB, is observed. For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed

Keywords

UHF bipolar transistors; earthing; inductance; lead bonding; microwave bipolar transistors; semiconductor device measurement; semiconductor device metallisation; 0.2 W; 0.5 W; 14.5 dB; 19 dB; 60 percent; RF power gain; emitter bondwire effective short-circuit; emitter bondwire inductance; emitter bondwire inductance elimination; emitter grounding; emitter plug grounded mounted bipolar transistors; enhanced RF power gain; low-ohmic substrate; maximum output power; output power; power added efficiency; power gain; substrate contact; Bipolar transistors; Bonding; Heat transfer; Inductance; Plugs; Power generation; Power transistors; Radio frequency; Substrates; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886204

Filename

886204