Feasibility Study of AlGaN/GaN HEMT for Multi-megahertz DC/DC Converter Applications

Author

Gao, Yang ; Huang, Alex Q.

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC

Volume

2

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

3

Abstract

The DC and AC characteristics of a 30 V AlGaN/GaN HEMT was investigated by numerical simulations. By properly model the 2DEG in the AlGaN/GaN interface, we obtain a maximum transconductance of 221 mS/mm, a saturation current density of 1.28 A/mm, a specific Rdson of 2.5 mOmega-mm², a specific Qgd of 0.62 nC/mm² and the value of FOM of 1.6 mOmeganC. The comparison with of the state-of-the-art Si-LDMOS and Si-Trench MOSFET were carried out and the results indicate that HEMTs could be a good candidate for very high frequency DC/DC converter applications

Keywords

DC-DC power convertors; III-V semiconductors; aluminium compounds; gallium compounds; numerical analysis; power HEMT; power MOSFET; silicon; 30 V; AC characteristics; AlGaN-GaN; AlGaN-GaN HEMT; DC characteristics; Si-trench MOSFET; maximum transconductance; multimegahertz DC-DC converters; numerical simulation; saturation current density; state-of-the-art Si-LDMOS; Aluminum gallium nitride; Current density; DC-DC power converters; Electron mobility; Frequency conversion; Gallium nitride; HEMTs; MOSFET circuits; Switches; Transconductance; AlGaN/GaN; HEMT; power; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4778172

Filename

4778172